4 inch SIO2 silicon dioxide wafer/Resistivity 0.01-0.02 ohms * cm/Model = Double oxygen/Silicon wafer thickness 525um

4 inch SIO2 silicon dioxide wafer/Resistivity 0.01-0.02 ohms * cm/Model = Double oxygen/Silicon wafer thickness 525um
sku: 32827833646
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$100.00
Shipping from: China
   Technical Details
Material: Monocrystalline silicon
Model Number: Crystal orientation 100/ Model P
Size: Oxide thickness 50nm
Standard: GB
Standard or Nonstandard: Standard
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