4 inch SIO2 silicon dioxide wafer/Resistivity 0.001-0.005 ohms * cm/Model = Double oxygen/Silicon wafer thickness 525um
Technical Details
Material: | Monocrystalline silicon |
Model Number: | Crystal orientation 100/ Model N |
Size: | Oxide thickness 100nm |
Standard: | GB |
Standard or Nonstandard: | Standard |
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