4 inch SIO2 silicon dioxide wafer/Mode =Double oxygen/Silicon wafer thickness 500um/Resistivity 0.001-0.005 ohms * cm
Technical Details
Material: | Monocrystalline silicon |
Model Number: | Crystal orientation 100/ Model P |
Size: | Oxide thickness 100nm |
Standard: | GB |
Standard or Nonstandard: | Standard |
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