4 inch SIO2 silicon dioxide wafer/Resistivity 0.0001-0.005 ohms * cm/Model = S oxygen/Silicon wafer thickness 500um

4 inch SIO2 silicon dioxide wafer/Resistivity 0.0001-0.005 ohms * cm/Model = S oxygen/Silicon wafer thickness 500um
sku: 32828854822
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$100.00
Shipping from: China
   Technical Details
Material: Monocrystalline silicon
Model Number: Crystal orientation 100/ Model N
Size: Oxide thickness 300nm
Standard: GB
Standard or Nonstandard: Standard
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