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MOSFET ZXMP4A57E6 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

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sku: 1005005823230883

$0.19

Shipping from: China

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MOSFET AO6409 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

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MOSFET SI3477DV-T1-GE3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

91%

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MOSFET SI3477DV-T1-GE3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

MOSFET 2615GY-HF SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

90%

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MOSFET 2615GY-HF SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

MOSFET F5805 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

87%

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MOSFET NTGS3455T1G SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

84%

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MOSFET NTGS3455T1G SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

MOSFET ZXM62P03E6TA SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

81%

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MOSFET ZXM62P03E6TA SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

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78%

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MOSFET ZXM62P02E6TA SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

MOSFET 443M SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

76%

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MOSFET 443M SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

MOSFET NTGS3433T1G SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

74%

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MOSFET NTGS3433T1G SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

MOSFET SI3435DV-T1-GE3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

73%

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MOSFET SI3435DV-T1-GE3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

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71%

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MOSFET F5800 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

70%

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MOSFET F5800 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

MOSFET SI3469DV-T1-E3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

68%

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MOSFET SI3469DV-T1-E3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

MOSFET SQ3481EV-T1-GE3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

66%

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MOSFET SQ3481EV-T1-GE3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

MOSFET RZQ045P01TR SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

65%

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MOSFET RZQ045P01TR SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

MOSFET AO6415 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

63%

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MOSFET AO6415 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

MOSFET 4A57 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

62%

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MOSFET 4A57 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

MOSFET RRQ030P03TR SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

61%

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MOSFET RRQ030P03TR SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

MOSFET 2607GY-HF SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

60%

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MOSFET 2607GY-HF SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

MOSFET STT3455 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

58%

$0.19

MOSFET STT3455 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

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57%

$0.19

MOSFET 2P03 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

MOSFET SI3471DV-T1-GE3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

55%

$0.19

MOSFET SI3471DV-T1-GE3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

MOSFET SI3455DV-T1-E3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

54%

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MOSFET SI3455DV-T1-E3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

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53%

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MOSFET STT6405 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead

50%

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47%

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44%

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