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MOSFET SI3435DV-T1-GE3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead
sku: 1005005823356119
$0.19
7.60 грн.
+3%
~
7.85 грн.
$0.19, $1.00 = 41.30 грн.
17.30 руб.
+10%
~
19.10 руб.
$0.19, $1.00 = 100.44 руб.
€ 0.17
+3%
~
€ 0.18
$0.19, € 1.00 = $1.05
Shipping from: China
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MOSFET SI3471DV-T1-GE3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead
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MOSFET SI3443DV-T1-GE3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead
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MOSFET SI3443BDV-T1-GE3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead
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MOSFET SI3457BDV-T1-GE3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead
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MOSFET SI3441BDV-T1-GE3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead
80%
$0.19
MOSFET SI3481DV-T1-GE3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead
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MOSFET SI3443CDV-T1-GE3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead
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MOSFET SI3867DV-T1-GE3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead
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MOSFET SI3483CDV-T1-GE3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead
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MOSFET SI3467DV-T1-GE3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead
64%
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MOSFET SI3457CDV-T1-GE3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead
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60%
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MOSFET Si3447CDV-T1-GE3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead
59%
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57%
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MOSFET Si3407DV-T1-GE3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead
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MOSFET SI3455ADV-T1-GE3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead
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MOSFET SI3477DV-T1-GE3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead
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MOSFET SQ3457EV-T1-GE3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead
39%
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MOSFET SI3493DV-T1-GE3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead
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MOSFET SI3471CDV-T1-GE3 SOT23-6 Field Effect Tube P—Channel -30V -4.8A VBsemi Discrete Semiconductor Transistor VB8338 Instead
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6/.007,641 0=.000,073 1=.000,870/1 2=.000,609/1 3=.000,656/1 4=.003,020/1 5=.000,097/1 6=.002,389/36
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