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Transistors - Bipolar (BJT) - Single, Pre-Biased
RN1117MFV,L3F
sku: 4669-RN1117MFV,L3F
$0.32
+1%
$0.32
12.50 грн.
+7%
~
13.40 грн.
$0.32, $1.00 = 41.28 грн.
29.40 руб.
-6%
~
27.70 руб.
$0.32, $1.00 = 85.46 руб.
~
€ 0.30
$0.32, € 1.00 = $1.08
Shipping from: Hong Kong
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Description
The Toshiba Semiconductor and Storage RN1117MFV,L3F is a Transistors - Bipolar (BJT) - Single, Pre-Biased, low power operational designed for cost-sensitive applications.
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7/.013,598 0=.000,073 1=.000,641/1 2=.003,554/1 3=.000,477/1 4=.000,733/1 5=.004,442/1 6=.000,107/1 7=.003,644/36
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