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MOSFET Si2343CDS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
sku: 1005005809506092
$0.07
2.90 грн.
+3%
~
2.98 грн.
$0.07, $1.00 = 42.60 грн.
6.75 руб.
+8%
~
7.25 руб.
$0.07, $1.00 = 103.79 руб.
€ 0.07
+6%
~
€ 0.07
$0.07, € 1.00 = $1.02
Shipping from: China
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MOSFET SI2323DDS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
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MOSFET SI2307BDS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
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MOSFET SI2307DS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
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MOSFET SI2307BDS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
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MOSFET SI2323CDS-T1-GE3 SOT-23 Field Effect Tube P-Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
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MOSFET SI2307CDS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
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MOSFET SI2343ADS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
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MOSFET SI2343DS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
74%
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MOSFET SI2319CDS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
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MOSFET SI2315BDS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
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MOSFET SI2367DS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
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MOSFET SI2333ADS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
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MOSFET Si2399CDS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
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MOSFET SI2303BDS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
58%
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MOSFET SI2323CDS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
57%
$0.07
MOSFET SI2319DS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
55%
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MOSFET SI2319CDS-T1-GE3 SOT-23 Field Effect Tube P-Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
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MOSFET SQ2303ES-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
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MOSFET SI2315DS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
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MOSFET SI2303DS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
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MOSFET SI2371EDS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
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MOSFET SI2347DS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
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6/.011,433 0=.000,106 1=.000,910/1 2=.000,910/1 3=.000,861/1 4=.003,925/1 5=.000,128/1 6=.004,699/36
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