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MOSFET SI2318CDS-T1-GE3 SOT-23 Field Effect Tube N—Channel 30V 6.5A VBsemi Discrete Semiconductor Transistor VB1330 Instead
sku: 1005005808822774
$0.07
2.88 грн.
+3%
~
2.98 грн.
$0.07, $1.00 = 42.45 грн.
6.65 руб.
+13%
~
7.55 руб.
$0.07, $1.00 = 107.56 руб.
€ 0.07
+5%
~
€ 0.07
$0.07, € 1.00 = $1.03
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MOSFET SI2318CDS-T1-GE3 SOT-23 Field Effect Tube N-Channel 30V 6.5A VBsemi Discrete Semiconductor Transistor VB1330 Instead
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MOSFET SI2316DS-T1-GE3 SOT-23 Field Effect Tube N—Channel 30V 6.5A VBsemi Discrete Semiconductor Transistor VB1330 Instead
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MOSFET SI2336DS-T1-GE3 SOT-23 Field Effect Tube N—Channel 30V 6.5A VBsemi Discrete Semiconductor Transistor VB1330 Instead
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MOSFET SI2334DS-T1-GE3 SOT-23 Field Effect Tube N—Channel 30V 6.5A VBsemi Discrete Semiconductor Transistor VB1330 Instead
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MOSFET Si2338DS-T1-GE3 SOT-23 Field Effect Tube N—Channel 30V 6.5A VBsemi Discrete Semiconductor Transistor VB1330 Instead
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MOSFET SQ2318ES-T1-GE3 SOT-23 Field Effect Tube N—Channel 30V 6.5A VBsemi Discrete Semiconductor Transistor VB1330 Instead
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MOSFET SI2318ADS-T1-GE3 SOT-23 Field Effect Tube N—Channel 30V 6.5A VBsemi Discrete Semiconductor Transistor VB1330 Instead
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MOSFET SQ2348ES-T1-GE3 SOT-23 Field Effect Tube N—Channel 30V 6.5A VBsemi Discrete Semiconductor Transistor VB1330 Instead
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MOSFET Si2338DS-T1-GE3 SOT-23 Field Effect Tube N-Channel 30V 6.5A VBsemi Discrete Semiconductor Transistor VB1330 Instead
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MOSFET SI2356DS-T1-GE3 SOT-23 Field Effect Tube N—Channel 30V 6.5A VBsemi Discrete Semiconductor Transistor VB1330 Instead
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MOSFET SI2318DS-T1-GE3 SOT-23 Field Effect Tube N-Channel 30V 6.5A VBsemi Discrete Semiconductor Transistor VB1330 Instead
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MOSFET SI2306DS-T1-GE3 SOT-23 Field Effect Tube N—Channel 30V 6.5A VBsemi Discrete Semiconductor Transistor VB1330 Instead
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MOSFET Si2372DS-T1-GE3 SOT-23 Field Effect Tube N—Channel 30V 6.5A VBsemi Discrete Semiconductor Transistor VB1330 Instead
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MOSFET SI2316BDS-T1-GE3 SOT-23 Field Effect Tube N—Channel 30V 6.5A VBsemi Discrete Semiconductor Transistor VB1330 Instead
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MOSFET SI2318BDS-T1-GE3 SOT-23 Field Effect Tube N—Channel 30V 6.5A VBsemi Discrete Semiconductor Transistor VB1330 Instead
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MOSFET SI2318DS-T1-GE3 SOT-23 Field Effect Tube N—Channel 30V 6.5A VBsemi Discrete Semiconductor Transistor VB1330 Instead
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MOSFET SI2304DDS-T1-GE3 SOT-23 Field Effect Tube N—Channel 30V 6.5A VBsemi Discrete Semiconductor Transistor VB1330 Instead
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MOSFET SI2366DS-T1-GE3 SOT-23 Field Effect Tube N—Channel 30V 6.5A VBsemi Discrete Semiconductor Transistor VB1330 Instead
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MOSFET SI2306BDS-T1-GE3 SOT-23 Field Effect Tube N—Channel 30V 6.5A VBsemi Discrete Semiconductor Transistor VB1330 Instead
65%
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MOSFET SQ2348ES-T1-GE3 SOT-23 Field Effect Tube N—Channel 30V 6.5A VBsemi Discrete Semiconductor Transistor VB1330 Instead
64%
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MOSFET SI2304BDS-T1-GE3 SOT-23 Field Effect Tube N—Channel 30V 6.5A VBsemi Discrete Semiconductor Transistor VB1330 Instead
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MOSFET SI2334DS-T1-E3 SOT-23 Field Effect Tube N—Channel 30V 6.5A VBsemi Discrete Semiconductor Transistor VB1330 Instead
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MOSFET SI2307BDS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
41%
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MOSFET SI2323CDS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
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MOSFET SI2319CDS-T1-GE3 SOT-23 Field Effect Tube P-Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
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MOSFET SI2323DS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
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MOSFET SI2319ADS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
32%
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MOSFET SI2371EDS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
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MOSFET SI2303BDS-T1-GE3 SOT-23 Field Effect Tube P—Channel -30V -5.6A VBsemi Discrete Semiconductor Transistor VB2355 Instead
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1%
~
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0.077, 3.72
7/.049,875 0=.000,223 1=.001,264/1 2=.001,544/1 3=.001,690/1 4=.001,706/1 5=.005,321/1 6=.000,694/1 7=.037,656/36
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