IRF9Z34NPBF rdtch29 dijamin
Описание
Pelanggan yang terhormat, kami mohon pengertiannya untuk order diatas Rp. 25.000,- (Minimum Rp. 25.000,- sebelum ongkos kirim) agar kami bisa memberikan pelayanan dan packing terbaik bagi anda.
Terimakasih...
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250A
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Vgs (Max) 20V
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V
FET Feature -
Power Dissipation (Max) 68W (Tc)
Operating Temperature -55C ~ 175C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3"
Terimakasih...
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250A
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Vgs (Max) 20V
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V
FET Feature -
Power Dissipation (Max) 68W (Tc)
Operating Temperature -55C ~ 175C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3"
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