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Transistors - Bipolar (BJT) - Single, Pre-Biased
RN1101MFV,L3F
sku: 4669-RN1101MFV,L3F
$0.03
1.30 грн.
+3%
~
1.34 грн.
$0.03, $1.00 = 44.60 грн.
2.32 руб.
+1%
~
2.34 руб.
$0.03, $1.00 = 77.90 руб.
€ 0.03
+2%
~
€ 0.03
$0.03, € 1.00 = $1.15
Shipping from: Hong Kong
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Description
The Toshiba Semiconductor and Storage RN1101MFV,L3F is a Transistors - Bipolar (BJT) - Single, Pre-Biased, low power operational designed for cost-sensitive applications.
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0.004, 16.91
2/1.452ms 0=0.097 1= 0.825/1 2= * 0.023/1 3= * 0.017/1 4= 0.627/1
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